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       CDBER70 Page 1 QW-A1093 REV:B 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Symbol Min Typ Max Unit Parameter Conditions Forward voltage IF = 1 5mA IF = 1 mA VF V 1 0.41 Reverse current IR uA VR = 5 0V Capacitance between terminals Reverse recovery time f = 1 MHz, and 0 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm CT Trr pF nS 5 2 0.1 5 O C unless otherwise noted) Maximum Rating (at TA=2 n Typ Max Unit IO VR(RMS) VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Symbol Mi Parameter Conditions RMS reverse voltage mA V V V 70 49 70 70 IFSM Forward current,surge peak 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A 0.1 PD Power dissipation mW 150 O C +125 TSTG Tj Storage temperature Junction temperature O C +125 -65 0.053(1.35) 0.045(1.15) 0.034(0.85) 0.026(0.65) 0.030(0.75) 0.024(0.60) Dimensions in inches and (millimeter) 0.022(0.55) Typ. 0.016(0.40) Typ. Comchip Technology CO., LTD. SMD Schottky Barrier Diode Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin/leadless package. - Majority carrier conduction. Mechanical data - Case: 0503/SOD-723F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Polarity: Indicated by cathode band. - Mounting position: Any - Weight: 0.002 gram(approx.). Io = 7 0 mA VR = 7 0 Volts RoHS Device 0503/SOD-723F |